| PART |
Description |
Maker |
| IDT728985 IDT728985DB IDT728985J IDT728985J8 IDT72 |
TSI-TDM Switches
256 x 256 Time Slot Interchange Digital Switch, 5.0V
256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 5.0V
|
Integrated Device Technology
IDT
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| VSC9187 |
Telecomm / Datacomm
VSC9187 Bromley - 3045 x 3045 VT1.5 TSI Switch Fabric
VSC9187 Bromley - 3045 x 3045 VT1.5 TSI Switch Fabric
|
Vitesse Semiconductor Corporation
http://
|
| IDT72V71650BB |
8K x 8K TSI, 32 I/O at 2/4/8 or 16Mbps, 3.3V
|
IDT
|
| IDT72V73250BB IDT72V73250DA |
8K x 8K TSI, 16 I/O at 32Mbps, 3.3V
|
IDT
|
| IDT72V73250 72V73250_DS |
TSI-TDM Switches
From old datasheet system
|
IDT
|
| GS880F18AT-6I GS880F32AT-6I |
6ns 512K x 18 8Mb sync burst SRAM
6ns 256K x 32 8Mb sync burst SRAM
|
GSI Technology
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| IDT72V73263BB IDT72V73263DR |
16K x 16K TSI, 64 I/O at 2/4/8/16 or 32Mbps, Rate-Matching, 3.3V
|
IDT
|
| MT58L512L18F MT58L256L32F |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| DS1265W DS1265W-DS1265W-150 DS1265W-100 DS1265W-15 |
3.3V 8Mb Nonvolatile SRAM
From old datasheet system
|
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
|
| WCMC8016V9X-FI70 WCMC8016V9X |
8Mb (512K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
